Forming an intermediate electrode between an ovonic threshold switch and a chalcogenide memory element

ABSTRACT

An intermediate electrode between an ovonic threshold switch and a memory element may be formed in the same pore with the memory element. This may have many advantages including, in some embodiments, reducing leakage.

BACKGROUND

This invention relates generally to phase change memory devices.

Phase change memory devices use phase change materials, i.e., materialsthat may be electrically switched between a generally amorphous and agenerally crystalline state, for electronic memory application. One typeof memory element utilizes a phase change material that may be, in oneapplication, electrically switched between a structural state ofgenerally amorphous and generally crystalline local order or betweendifferent detectable states of local order across the entire spectrumbetween completely amorphous and completely crystalline states. Thestate of the phase change materials is also non-volatile in that, whenset in either a crystalline, semi-crystalline, amorphous, orsemi-amorphous state representing a resistance value, that value isretained until changed by another programming event, as that valuerepresents a phase or physical state of the material (e.g., crystallineor amorphous). The state is unaffected by removing electrical power.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an enlarged, cross-sectional view of one embodiment of thepresent invention;

FIG. 2 is an enlarged, cross-sectional view at an early stage ofmanufacture in accordance with one embodiment of the present invention;

FIG. 3 is an enlarged, cross-sectional view at a subsequent stage inaccordance with one embodiment of the present invention;

FIG. 4 is an enlarged, cross-sectional view at a subsequent stage inaccordance with one embodiment of the present invention;

FIG. 5 is an enlarged, cross-sectional view at a subsequent stage inaccordance with one embodiment of the present invention; and

FIG. 6 is a system depiction in accordance with one embodiment of thepresent invention.

DETAILED DESCRIPTION

Referring to FIG. 1, an ovonic unified memory (OUM) 10 may include anovonic threshold switch 14 over a memory element 12. In one embodimentof the present invention, the ovonic threshold switch 14 may be made bya so-called dot process so that the ovonic threshold switch is in theform of a stack of layers with aligned, etched, side edges positionedover the memory element.

The memory element 12 may be formed on a semiconductor substrate 16. Itmay include a metallization or lower electrode 18 which, in oneembodiment, may provide a signal line or row line.

A dielectric material 20 may be formed above the metallization 18.Suitable dielectrics include oxide and nitride. A pore 29 may be formedthrough the dielectric material 20 vertically down to the metallization18. Within the pore 29 may be a sidewall spacer 32, a heater element 26,a chalcogenide material 28, and an intermediate electrode 30. Theintermediate electrode 30 may be aligned within the pore 29 in oneembodiment.

Over the intermediate electrode 30 and making contact thereto is theovonic threshold switch 14. It may include a chalcogenide layer 22 thatis always in its amorphous state and does not change phase during normaloperation of the switch. The top electrode 24 may act as the topelectrode of the entire memory 10. The top electrode 24 and chalcogenidelayer 22 may be masked and dry etched.

Thus, in some embodiments, the intermediate electrode 30 couples theovonic threshold switch 14 to the memory element 12. It may serve toreduce leakage, in some embodiments, because, unlike conventionaldevices, the intermediate electrode 30 is provided within the pore 29which also defines the memory element 12. More conventionally, theintermediate electrode is patterned and etched as part of the ovonicthreshold switch stack.

Referring to FIG. 2, initially, the pore 29 may be formed with a spacer32. Any conventional dielectric may be formed as the spacer usingconventional spacer formation processes, including deposition andanisotropic etch. A heater element 26 may be formed in contact with themetallization 18. Many techniques for forming the heater element 26 maybe utilized, including a dip back technique wherein the heater elementis partially removed from the pore. The chalcogenide material 28 may bedeposited and then planarized. As a result, the chalcogenide material 28has a V-shaped configuration due to the fact that the tops of thespacers 32 tend to be etched away, therefore, creating a wider upperregion of the pore compared to its lower region.

Referring to FIG. 3, in accordance with some embodiments, a recess 31may be formed in the pore 29 and its upper extent. This may be done by avariety of techniques including, for example, sputter etching, wetetching, or aggressive chemical mechanical planarization in the courseof planarizing the chalcogenide material 28. In some embodiments, therecess 31 may be on the order of about 200 Angstroms in depth.

Then, referring to FIG. 4, an intermediate electrode 30 may be depositedusing any conventional technique. The intermediate electrode 30 may beformed of a conductive material that does not react with thechalcogenides used for the layer 22 or material 28. Suitable materialsfor the intermediate electrode 30 include the following materials:titanium aluminum nitride, carbon, tantalum nitride, or molybdenumnitride, to give a few examples.

Finally, referring to FIG. 5, the intermediate electrode 30 may bechemically mechanically polished or otherwise planarized so that itsupper surface is coplanar with the upper surface of the dielectricmaterial 20. As a result, the intermediate electrode 30 is recessedwithin the recess 31 and appears as part of the memory element 12.Thereafter, the ovonic threshold switch 14 may be formed by depositing aseries of layers and then using a mask to etch the layers with alignededges to achieve the dot stack structure shown in FIG. 1.

In some embodiments, the intermediate electrode 30 may be self-alignedto reduce the contact area and thereby leakage. The edge of the ovonicthreshold switch 14 may be inhomogeneous due to interaction withprocessing such as the etching and subsequent thermal steps. As a resultof the configuration shown in FIG. 1, in some embodiments, theintermediate electrode 30 does not extend into this inhomogeneousregion. For example, the edges of the electrode 30 and switch 14 may beoffset with the switch extending beyond both edges of said electrode. Inaddition, the intermediate electrode may not extend to the edge of thedot stack, forming the ovonic threshold switch 14 which may reduce edgeleakage mechanisms.

Because of the self-alignment to the memory element 12, the smallestpossible geometric area may be achieved, in some embodiments, which isfavorable for reducing device leakage.

A series connected select device in the form of the ovonic thresholdswitch 14 may be used to access a memory element 12, including the phasechange material 28, during programming or reading of memory element. Aselect device may be an ovonic threshold switch that can be made of achalcogenide alloy that does not exhibit an amorphous to crystallinephase change and which undergoes rapid, electric field initiated changein electrical conductivity that persists only so long as a holdingvoltage is present.

A select device may operate as a switch that is either “off” or “on”depending on the amount of voltage potential applied across the memorycell, and more particularly whether the current through the selectdevice exceeds its threshold current or voltage, which then triggers thedevice into the on state. The off state may be a substantiallyelectrically nonconductive state and the on state may be a substantiallyconductive state, with less resistance than the off state.

In the on state, the voltage across the select device is equal to itsholding voltage V_(H) plus IxRon, where Ron is the dynamic resistancefrom the extrapolated X-axis intercept, V_(H). For example, a selectdevice may have threshold voltages and, if a voltage potential less thanthe threshold voltage of a select device is applied across the selectdevice, then the select device may remain “off” or in a relatively highresistive state so that little or no electrical current passes throughthe memory cell and most of the voltage drop from selected row toselected column is across the select device. Alternatively, if a voltagepotential greater than the threshold voltage of a select device isapplied across the select device, then the select device may “turn on,”i.e., operate in a relatively low resistive state so that electricalcurrent passes through the memory cell. In other words, one or moreseries connected select devices may be in a substantially electricallynonconductive state if less than a predetermined voltage potential,e.g., the threshold voltage, is applied across select devices. Selectdevices may be in a substantially conductive state if greater than thepredetermined voltage potential is applied across select devices. Selectdevices may also be referred to as an access device, an isolationdevice, or a switch.

In one embodiment, each select device may comprise a switching materialsuch as, for example, a chalcogenide alloy, and may be referred to as anovonic threshold switch, or simply an ovonic switch. The switchingmaterial of select devices may be a material in a substantiallyamorphous state positioned between two electrodes that may be repeatedlyand reversibly switched between a higher resistance “off” state (e.g.,greater than about ten megaOhms) and a relatively lower resistance “on”state (e.g., about one thousand Ohms in series with V_(H)) byapplication of a predetermined electrical current or voltage potential.In this embodiment, each select device may be a two terminal device thatmay have a current-voltage (I-V) characteristic similar to a phasechange memory element that is in the amorphous state. However, unlike aphase change memory element, the switching material of select devicesmay not change phase. That is, the switching material of select devicesmay not be a programmable material, and, as a result, select devices maynot be a memory device capable of storing information. For example, theswitching material of select devices may remain permanently amorphousand the I-V characteristic may remain the same throughout the operatinglife.

In the low voltage or low electric field mode, i.e., where the voltageapplied across select device is less than a threshold voltage (labeledV_(TH)), a select device may be “off” or nonconducting, and exhibit arelatively high resistance, e.g., greater than about 10 megaOhms. Theselect device may remain in the off state until a sufficient voltage,e.g., V_(TH), is applied, or a sufficient current is applied, e.g.,I_(TH), that may switch the select device to a conductive, relativelylow resistance on state. After a voltage potential of greater than aboutV_(TH) is applied across the select device, the voltage potential acrossthe select device may drop (“snapback”) to a holding voltage potential,V_(H). Snapback may refer to the voltage difference between V_(TH) andV_(H) of a select device.

In the on state, the voltage potential across select device may remainclose to the holding voltage of V_(H) as current passing through selectdevice is increased. The select device may remain on until the currentthrough the select device drops below a holding current, I_(H). Belowthis value, the select device may turn off and return to a relativelyhigh resistance, nonconductive off state until the V_(TH) and I_(TH) areexceeded again.

In some embodiments, only one select device may be used. In otherembodiments, more than two select devices may be used. A single selectdevice may have a V_(H) about equal to its threshold voltage, V_(TH), (avoltage difference less than the threshold voltage of the memoryelement) to avoid triggering a reset bit when the select device triggersfrom a threshold voltage to a lower holding voltage called the snapbackvoltage. An another example, the threshold current of the memory elementmay be about equal to the threshold current of the access device eventhough its snapback voltage is greater than the memory element's resetbit threshold voltage.

Programming of the chalcogenide 28 to alter the state or phase of thematerial may be accomplished by applying voltage potentials to the lowerelectrode 18 and top electrode 24, thereby generating a voltagepotential across the select device and memory element. When the voltagepotential is greater than the threshold voltages of select device andmemory element, then an electrical current may flow through thechalcogenide 28 in response to the applied voltage potentials, and mayresult in heating of the chalcogenide 28.

This heating may alter the memory state or phase of the chalcogenide 28.Altering the phase or state of the chalcogenide 28 may alter theelectrical characteristic of memory material, e.g., the resistance ofthe material may be altered by altering the phase of the memorymaterial. Memory material may also be referred to as a programmableresistive material.

In the “reset” state, memory material may be in an amorphous orsemi-amorphous state and in the “set” state, memory material may be inan a crystalline or semi-crystalline state. The resistance of memorymaterial in the amorphous or semi-amorphous state may be greater thanthe resistance of memory material in the crystalline or semi-crystallinestate. It is to be appreciated that the association of reset and setwith amorphous and crystalline states, respectively, is a convention andthat at least an opposite convention may be adopted.

Using electrical current, memory material may be heated to a relativelyhigher temperature to amorphosize memory material and “reset” memorymaterial (e.g., program memory material to a logic “0” value). Heatingthe volume of memory material to a relatively lower crystallizationtemperature may crystallize memory material and “set” memory material(e.g., program memory material to a logic “1” value). Variousresistances of memory material may be achieved to store information byvarying the amount of current flow and duration through the volume ofmemory material.

Turning to FIG. 6, a portion of a system 500 in accordance with anembodiment of the present invention is described. System 500 may be usedin wireless devices such as, for example, a personal digital assistant(PDA), a laptop or portable computer with wireless capability, a webtablet, a wireless telephone, a pager, an instant messaging device, adigital music player, a digital camera, or other devices that may beadapted to transmit and/or receive information wirelessly. System 500may be used in any of the following systems: a wireless local areanetwork (WLAN) system, a wireless personal area network (WPAN) system, acellular network, although the scope of the present invention is notlimited in this respect.

System 500 may include a controller 510, an input/output (I/O) device520 (e.g. a keypad, display), static random access memory (SRAM) 560, amemory 530, and a wireless interface 540 coupled to each other via a bus550. A battery 580 may be used in some embodiments. It should be notedthat the scope of the present invention is not limited to embodimentshaving any or all of these components.

Controller 510 may comprise, for example, one or more microprocessors,digital signal processors, microcontrollers, or the like. Memory 530 maybe used to store messages transmitted to or by system 500. Memory 530may also optionally be used to store instructions that are executed bycontroller 510 during the operation of system 500, and may be used tostore user data. Memory 530 may be provided by one or more differenttypes of memory. For example, memory 530 may comprise any type of randomaccess memory, a volatile memory, a non-volatile memory such as a flashmemory and/or a memory such as memory discussed herein.

I/O device 520 may be used by a user to generate a message. System 500may use wireless interface 540 to transmit and receive messages to andfrom a wireless communication network with a radio frequency (RF)signal. Examples of wireless interface 540 may include an antenna or awireless transceiver, although the scope of the present invention is notlimited in this respect.

References throughout this specification to “one embodiment” or “anembodiment” mean that a particular feature, structure, or characteristicdescribed in connection with the embodiment is included in at least oneimplementation encompassed within the present invention. Thus,appearances of the phrase “one embodiment” or “in an embodiment” are notnecessarily referring to the same embodiment. Furthermore, theparticular features, structures, or characteristics may be instituted inother suitable forms other than the particular embodiment illustratedand all such forms may be encompassed within the claims of the presentapplication.

While the present invention has been described with respect to a limitednumber of embodiments, those skilled in the art will appreciate numerousmodifications and variations therefrom. It is intended that the appendedclaims cover all such modifications and variations as fall within thetrue spirit and scope of this present invention.

1. A method comprising: forming a chalcogenide memory element in a pore;forming an ovonic threshold switch over said pore; and forming anintermediate electrode in said pore between said ovonic threshold switchand said memory element wherein forming an ovonic threshold switchincludes depositing a second chalcogenide over the intermediateelectrode.
 2. The method of claim 1 including depositing chalcogenide insaid pore and planarizing said chalcogenide.
 3. The method of claim 2including removing some of said chalcogenide from said pore to form arecess over said memory element.
 4. The method of claim 3 includingdepositing an electrode material in said recess.
 5. The method of claim4 including planarizing said electrode material to form saidintermediate electrode.
 6. The method of claim 1 including depositing atop electrode over said second chalcogenide.
 7. The method of claim 6including masking said top electrode and using said mask to etch boththe top electrode and said second chalcogenide.
 8. The method of claim 1wherein forming an intermediate electrode includes forming theintermediate electrode entirely with said pore.
 9. The method of claim 8including forming said pore through dielectric material.